SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 1 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 12 v (d-s) mosfet marking code: xxxx = 8483 ? xxx = date / lot traceability code ordering information: ? SI8483DB-t2-e1 (lead (pb)-free and halogen-free) features ? trenchfet ? power mosfet ? ultra-small 1.5 mm x 1 mm maximum outline ? ultra-thin 0.59 mm maximum height ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? load switch for smart phones, tablet pcs, and mobile computing ? - low voltage drop ? - low power consumption ? - increased battery life notes a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. refer to ipc/jedec ? (j-std-020), no manua l or hand soldering. d. case is defined as the top surface of the package. e. based on t c = 25 c. f. maximum under steady stat e conditions is 85 c/w. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) e q g (typ.) -12 0.026 at v gs = -4.5 v -16 21 nc 0.035 at v gs = -2.5 v -16 0.055 at v gs = -1.8 v -13 0.092 at v gs = -1.5 v -2.5 micro foot ? 1.5 x 1 back s ide view 1 1 mm 1.5 mm xxxx xxx bump s ide view 5 d 6 s 1 g d 4 s 3 s 2 s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -12 v gate-source voltage v gs 10 continuous drain current (t j = 150 c) t c = 25 c i d -16 a t c = 70 c -15 t a = 25 c -8.7 a, b t a = 70 c -7 a, b pulsed drain current i dm -25 continuous source-drain diode current t c = 25 c i s -10.8 t a = 25 c -2.3 a, b maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.77 a, b t a = 70 c 1.77 a, b operating junction and storage temperature range t j , t stg -55 to +150 c package reflow conditions c ir/convection 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, f r thja 37 45 c/w maximum junction-to-case (drain) steady state r thjc 79.5
SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 2 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = -250 a -12 - - v v ds temperature coefficient ? v ds /t j i d = -250 a --7- mv/c v gs(th) temperature coefficient ? v gs(th) /t j -2.8- gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -0.4 - -0.8 v gate-source leakage i gss v ds = 0 v, v gs = 10 v - - 100 na zero gate voltage drain current i dss v ds = -12 v, v gs = 0 v - - -1 a v ds = -12 v, v gs = 0 v, t j = 70 c - - -10 on-state drain current a i d(on) v ds ? -5 v, v gs = -4.5 v -5 - - a drain-source on-state resistance a r ds(on) v gs = -4.5 v, i d = -1.5 a - 0.022 0.026 ? v gs = -2.5 v, i d = -1.5 a - 0.028 0.035 v gs = -1.8 v, i d = -1 a - 0.040 0.055 v gs = -1.5 v, i d = -0.5 a - 0.056 0.092 forward transconductance a g fs v ds = -6 v, i d = -1.5 a - 10 - s dynamic b input capacitance c iss v ds = -6 v, v gs = 0 v, f = 1 mhz - 1840 - pf output capacitance c oss - 410 - reverse transfer capacitance c rss - 380 - total gate charge q g v ds = -6 v, v gs = -10 v, i d = -1.5 a - 43 65 nc v ds = -6 v, v gs = -4.5 v, i d = -1.5 a -2132 gate-source charge q gs -2.1- gate-drain charge q gd -4.8- gate resistance r g v gs = -0.1 v, f = 1 mhz - 2.2 - ? turn-on delay time t d(on) v dd = -6 v, r l = 4 ? i d ? -1.5 a, v gen = -4.5 v, r g = 1 ? -2040 ns rise time t r -2550 turn-off delay time t d(off) -4080 fall time t f -1020 turn-on delay time t d(on) v dd = -6 v, r l = 4 ? i d ? -1.5 a, v gen = -10v, r g = 1 ? -1020 rise time t r -1020 turn-off delay time t d(off) -4080 fall time t f -1020 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - -10.8 a pulse diode forward current i sm ---25 body diode voltage v sd i s = -1.5 a, v gs = 0 - -0.8 -1.2 v body diode reverse recovery time t rr i f = -1.5 a, di/dt = 100 a/s, t j = 25 c -3060ns body diode reverse recovery charge q rr -1225nc reverse recovery fall time t a - 11.5 - ns reverse recovery rise time t b - 18.5 -
SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 3 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 2 v v gs = 5 v thru 2.5 v v gs = 1.5 v 0 0.04 0.08 0.12 0.16 0 5 10 15 20 25 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 2.5 v v gs = 1.8 v v gs = 4.5 v v gs = 1.5 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 9.6 v v d s = 3 v v d s = 6 v i d = 1.5 a 0 2 4 6 8 10 0 0.5 1 1.5 2 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 500 1000 1500 2000 2500 3000 0 3 6 9 12 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 4.5 v, 2.5 v; i d = 1.5 a v gs = 1.8 v; i d = 1.5 a v gs = 1.5 v; i d = 0.5 a
SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 4 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j -temperature ( c) i d = 250 a 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 012345 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 1.5 a 0 5 10 15 20 25 30 power (w) pul s e ( s ) 10 1000 0.1 0.01 0.001 100 1 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 s 100 m s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 1 s , 10 s dc
SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 5 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating* power derating ? ? ? ? * the power dissipation p d is based on t j (max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissi pation limit for cases where additional heatsinking is used. it is used to determine the current rating , when this rating falls below the package limit. 0 4 8 12 16 20 24 0 25 50 75 100 125 150 i d - drain current (a) t c - ambient temperature ( c) package limited 0 3 6 9 12 15 25 50 75 100 125 150 t c - ca s e temperature (c) power di ss ipation (w)
SI8483DB www.vishay.com vishay siliconix s15-0932-rev. c, 20-apr-15 6 document number: 63553 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63553 . 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance 1 0.1 0.01 t 1 t 2 note s : p dm 1. duty cycle, d = 2. per unit ba s e = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s urface mounted duty cycle = 0.5 s ingle pul s e 0.02 0.05 10 -3 10 -2 10 -1 10 -4 1 0.1 0.2 0.1 duty cycle = 0.5 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance 0.02 0.05 s ingle pul s e
package information www.vishay.com vishay siliconix revison: 20-apr-15 1 document number: 69426 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 micro foot ? : 6-bump (1.5 mm x 1 mm, 0.5 mm pitch, 0.250 mm bump height) notes (unless otherwise specified) 1. six (6) solder bumps are 95.5/3.8/0.7 sn/ag/cu. 2. backside surface is coated with a ti/ni/ag layer. 3. non-solder mask defi ned copper landing pad. 4. laser marks on the silicon die back. 5. b1 is the diameter of the solderable substrate surface, defi ned by an opening in the solder resist layer solder mask define d. 6. ? is the location of pin 1 note ? use millimeters as the primary measurement. dim. millimeters inches min. nom. max. min. nom. max. a 0.510 0.575 0.590 0.0201 0.0226 0.0232 a 1 0.220 0.250 0.280 0.0087 0.0098 0.0110 a 2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.297 0.330 0.363 0.0116 0.0129 0.0143 b1 0.250 0.0098 e 0.500 0.0197 s 0.210 0.230 0.250 0.0082 0.0090 0.0098 d 0.920 0.960 1.000 0.0362 0.0378 0.0394 e 1.420 1.460 1.500 0.0559 0.0575 0.0591 k 0.028 0.065 0.102 0.0011 0.0025 0.0040 ecn: t15-0140-rev. a, 20-apr-15 dwg: 6035 d e s a a1 a2 s e e s s xxxx xxx mark on backside of die e e e e d d s g s s note 5 abc recommended land pattern 6x ? b1 bump (note 2) k b 6x ? 0.24 to 0.26 (note 3) solder mask ~ ? 0.25
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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